simple gate drive bv dss -20v small package outline r ds(on) 800m ? fast switching speed i d -550ma rohs compliant description absolute maximum ratings symbol unit v ds v v gs v i d @t a =25 ma i d @t a =70 ma i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 360 /w AP1333GU parameter rating drain-source voltage -20 gate-source voltage 1 2 continuous drain current 3 -550 continuous drain current 3 -440 pulsed drain current 1 ,2 2.5 total power dissipation 0.35 -55 to 1 50 operating junction temperature range -55 to 1 50 linear derating factor 0.003 storage temperature range thermal data parameter d g s sot-323 the advanced power mosfets from provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. g d s product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com ty
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =- 1 ma - 0.0 1 -v/ r ds(on) static drain-source on-resistance v gs =- 1 0v, i d =-550ma - - 600 m v gs =-4.5v, i d =-500ma - - 800 m v gs =-2.5v, i d =-300ma - - 1 000 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - - 1 .2 v g fs forward transconductance v ds =-5v, i d =-500ma - 1 -s i dss drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - - 1 ua drain-source leakage current (t j =70 o c) v ds =- 1 6v ,v gs =0v - - - 1 0 ua i gss gate-source leakage v gs = 1 2v - - 1 00 na q g total gate charge 2 i d =-500ma - 1 .7 2.7 nc q gs gate-source charge v ds =- 1 6v - 0.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 0.4 - nc t d(on) turn-on delay time 2 v ds =- 1 0v - 5 - ns t r rise time i d =-500ma - 8 - ns t d(off) turn-off delay time r g =3.3 , v gs =-5v - 1 0- ns t f fall time r d =20 -2- ns c iss input capacitance v gs =0v - 66 1 05.6 pf c oss output capacitance v ds =- 1 0v - 25 - pf c rss reverse transfer capacitance f= 1 .0mhz - 20 - pf source-drain diode symbol parameter test conditions min. typ. max. unit v sd forward on voltage 2 i s =-300ma, v gs =0v - - - 1 .2 v notes: 1 .pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on fr4 board, t Q 1 0 sec. AP1333GU product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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